Xu Peng, Xia Ke, Gu Changzhi, Tang Ling, Yang Haifang, Li Junjie
Nat Nanotechnol. 2008 Feb;3(2):97-100. doi: 10.1038/nnano.2008.1. Epub 2008 Feb 3.
The walls of magnetic domains can become trapped in a ferromagnetic metallic point contact when the thickness of the film and the width of the contact are less than their critical values. The discovery that domain walls can be moved from such constrictions by a sufficiently large current has attracted considerable attention from researchers working on both fundamental research and potential applications. Here we show that Invar nanocontacts fabricated on silica substrates exhibit a sharp drop in resistance with increasing bias voltage at room temperature in the absence of an applied magnetic field. Moreover, when two nanocontacts are combined in an all-metallic comparison circuit, it is possible to perform logical NOT operations. The use of electrical currents rather than applied magnetic fields to control the domain walls also reduces energy consumption and the risk of crosstalk in devices.
当薄膜厚度和接触宽度小于其临界值时，磁畴壁会被困在铁磁金属点接触中。研究人员发现，通过足够大的电流可以使畴壁从这种收缩处移动，这一发现引起了从事基础研究和潜在应用的研究人员的广泛关注。在这里，我们表明，在二氧化硅衬底上制造的因瓦纳米接触在室温下、无外加磁场时，随着偏置电压的增加，电阻会急剧下降。此外，当两个纳米接触组合在一个全金属比较电路中时，就可以执行逻辑非操作。使用电流而非外加磁场来控制畴壁，还能降低设备中的能耗和串扰风险。
