Combrié Sylvain, De Rossi Alfredo, Tran Quynh Vy, Benisty Henri
Thales Research and Technology, Palaiseau, France.
Opt Lett. 2008 Aug 15;33(16):1908-10. doi: 10.1364/ol.33.001908.
We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006)]. We measure a quality factor Q=700,000, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities.
我们已经基于仓持等人[《应用物理快报》88, 041112 (2006)]的设计，在平板光子晶体中实现并测量了一个砷化镓纳米腔。我们测量到品质因数Q = 700,000，这证明了超高Q值纳米腔在砷化镓中也是可行的。我们表明，由于砷化镓中较大的双光子吸收，非线性在微瓦级别出现，并且在砷化镓中比在硅纳米腔中更具功能性。
