Jin Gangtae, Lee Chang-Soo, Liao Xing, Kim Juho, Wang Zhen, Okello Odongo Francis Ngome, Park Bumsu, Park Jaehyun, Han Cheolhee, Heo Hoseok, Kim Jonghwan, Oh Sang Ho, Choi Si-Young, Park Hongkun, Jo Moon-Ho
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea.
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Sci Adv. 2019 Jul 26;5(7):eaaw3180. doi: 10.1126/sciadv.aaw3180. eCollection 2019 Jul.
We report wafer-scale growth of atomically thin, three-dimensional (3D) van der Waals (vdW) semiconductor membranes. By controlling the growth kinetics in the near-equilibrium limit during metal-organic chemical vapor depositions of MoS and WS monolayer (ML) crystals, we have achieved conformal ML coverage on diverse 3D texture substrates, such as periodic arrays of nanoscale needles and trenches on quartz and SiO/Si substrates. The ML semiconductor properties, such as channel resistivity and photoluminescence, are verified to be seamlessly uniform over the 3D textures and are scalable to wafer scale. In addition, we demonstrated that these 3D films can be easily delaminated from the growth substrates to form suspended 3D semiconductor membranes. Our work suggests that vdW ML semiconductor films can be useful platforms for patchable membrane electronics with atomic precision, yet large areas, on arbitrary substrates.
我们报道了原子级薄的三维(3D)范德华(vdW)半导体膜的晶圆级生长。通过在MoS和WS单层(ML)晶体的金属有机化学气相沉积过程中控制近平衡极限下的生长动力学,我们在各种3D纹理衬底上实现了共形ML覆盖,例如石英和SiO/Si衬底上的纳米级针状和沟槽的周期性阵列。ML半导体特性,如沟道电阻率和光致发光,被证实可在3D纹理上无缝均匀,并且可扩展到晶圆级。此外,我们证明了这些3D薄膜可以很容易地从生长衬底上分层,以形成悬浮的3D半导体膜。我们的工作表明,vdW ML半导体膜可以成为在任意衬底上具有原子精度且大面积的可修补膜电子学的有用平台。