Jo Sung Hyun, Kim Kuk-Hwan, Lu Wei
Department of Electrical Engineering and Computer Science, the University of Michigan, Ann Arbor, Michigan 48109, USA.
Nano Lett. 2009 Feb;9(2):870-4. doi: 10.1021/nl8037689.
We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a write-once type memory depending on the device configuration. The demonstration of large-scale crossbar arrays with excellent reproducibility and reliability also facilitates further studies on hybrid nano/CMOS systems.
我们展示了使用基于硅的忆阻系统的大规模（1 kb）高密度交叉开关阵列。在阵列的每个交叉点处形成一个双端迟滞电阻开关（忆阻器件），并且可以以高成品率和开/关比进行寻址。根据器件配置，交叉开关阵列既可以实现为电阻式随机存取存储器（RRAM），也可以实现为一次性写入型存储器。具有出色再现性和可靠性的大规模交叉开关阵列的展示也有助于对混合纳米/CMOS系统的进一步研究。
