Shin Hee Ju, Seo Hyun Kyu, Lee Su Yeon, Park Minsoo, Park Seong-Geon, Yang Min Kyu
Artificial Intelligence Convergence Research Lab, Sahmyook University, Seoul 01795, Korea.
Semiconductor Research & Development, Samsung Electronics, Hwaseong 18448, Korea.
Materials (Basel). 2022 Mar 24;15(7):2402. doi: 10.3390/ma15072402.
TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125 °C) for all the 4 bits/cell operations was achieved in sub-μm scaled RRAM (resistive random access memory) devices.
采用双层电阻式开关存储器的TiN/AlOx:Ti/TaOx/TiN存储器件展现出了优异的耐久性以及QLC（四级单元）存储器件的性能。通过在阵列中使用增量阶梯脉冲编程（ISPP）算法，获得了具有最低工作电流和优化的4位/单元状态的最佳非易失性存储特性。结果，在亚微米级RRAM（电阻式随机存取存储器）器件中，对于所有4位/单元操作都实现了卓越的QLC可靠性（在QLC的每个级别上循环耐久性>1k，在125°C下数据保持>2小时）。
