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扫描开尔文探针显微镜中真实表面电位与测量表面电位的对比

Real versus measured surface potentials in scanning Kelvin probe microscopy.

作者信息

Charrier Dimitri S H, Kemerink Martijn, Smalbrugge Barry E, de Vries Tjibbe, Janssen René A J

机构信息

Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands.

出版信息

ACS Nano. 2008 Apr;2(4):622-6. doi: 10.1021/nn700190t.

Abstract

Noncontact potentiometry or scanning Kelvin probe microscopy (SKPM) is a widely used technique to study charge injection and transport in (in)organic devices by measuring a laterally resolved local potential. This technique suffers from the significant drawback that experimentally obtained curves do not generally reflect the true potential profile in the device due to nonlocal coupling between the probing tip and the device. In this work, we quantitatively explain the experimental SKPM response and by doing so directly link theoretical device models to real observables. In particular, the model quantitatively explains the effects of the tip-sample distance and the dependence on the orientation of the probing tip with respect to the device.

摘要

非接触电位测量法或扫描开尔文探针显微镜(SKPM)是一种广泛应用的技术,通过测量横向分辨的局部电位来研究(有机)器件中的电荷注入和传输。该技术存在一个重大缺陷,即由于探测尖端与器件之间的非局部耦合,实验获得的曲线通常不能反映器件中的真实电位分布。在这项工作中,我们定量解释了实验SKPM响应,并通过这样做将理论器件模型与实际可观测值直接联系起来。特别是,该模型定量解释了尖端与样品距离的影响以及探测尖端相对于器件的取向依赖性。

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