Black Charles T
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA.
ACS Nano. 2007 Oct;1(3):147-50. doi: 10.1021/nn7002663.
The extreme technological complexity associated with continued dimensional scaling of the photolithographic patterning process to sub-50 nm dimensions has forced the semiconductor industry to seek increasingly innovative alternative approaches. One unconventional method under preliminary consideration involves using self-assembling block copolymer films as high-resolution patterning materials for defining integrated circuit (IC) elements. While these materials are attractive because of their ability to define nanometer-scale dimensions, their ultimate utility as a viable patterning method remains in question because of issues relating to pattern roughness and defectivity. In this issue, Prof. Paul Nealey and co-workers at the University of Wisconsin present compelling first demonstrations of experimental methods by which polymer self-assembly can generate the pattern elements essential for IC fabrication.
将光刻图案化工艺持续缩小到50纳米以下尺寸所涉及的极端技术复杂性，迫使半导体行业寻求越来越创新的替代方法。一种正在初步考虑的非常规方法是使用自组装嵌段共聚物薄膜作为用于定义集成电路（IC）元件的高分辨率图案化材料。虽然这些材料因其能够定义纳米级尺寸而颇具吸引力，但由于与图案粗糙度和缺陷相关的问题，它们作为一种可行的图案化方法的最终实用性仍存在疑问。在本期中，威斯康星大学的保罗·尼利教授及其同事展示了令人信服的首次实验方法演示，通过这些方法，聚合物自组装可以生成IC制造所需的图案元件。
