Luo Lian-Wee, Wiederhecker Gustavo S, Cardenas Jaime, Poitras Carl, Lipson Michal
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Opt Express. 2011 Mar 28;19(7):6284-9. doi: 10.1364/OE.19.006284.
We demonstrate high quality factor etchless silicon photonic ring resonators fabricated by selective thermal oxidation of silicon without the silicon layer being exposed to any plasma etching throughout the fabrication process. We achieve a high intrinsic quality factor of 510,000 in 50 µm-radius ring resonators, corresponding to a ring loss of 0.8 dB/cm. The device has a total chip insertion loss of 2.5 dB, achieved by designing etchless silicon inverse nanotapers at both the input and output of the chip.
我们展示了通过硅的选择性热氧化制造的高品质因数无蚀刻硅光子环形谐振器，在整个制造过程中硅层未暴露于任何等离子体蚀刻。我们在半径为50 µm的环形谐振器中实现了510,000的高本征品质因数，对应于0.8 dB/cm的环形损耗。通过在芯片的输入和输出端设计无蚀刻硅反向纳米锥，该器件的芯片总插入损耗为2.5 dB。
