铜掺杂诱导氧化锌纳米线中的铁磁性。

Cu-doping induced ferromagnetism in ZnO nanowires.

作者信息

Xu Congkang, Yang Kaikun, Huang Liwei, Wang Howard

机构信息

Department of Mechanical Engineering, Center for Advanced Microelectronics Manufacturing, Binghamton University, State University of New York, P.O. Box 6000, Binghamton, New York 13902, USA.

出版信息

J Chem Phys. 2009 Mar 28;130(12):124711. doi: 10.1063/1.3100505.

DOI:10.1063/1.3100505

PMID:19334876

Abstract

Cu-doped and undoped ZnO nanowires have been successfully fabricated at 600 degrees C using a vapor transport approach. Comprehensive structural analyses on as-fabricated nanowires reveal highly crystalline ZnO nanowires with 0.5 at. % of substitutional Cu doping. Ferromagnetism has been observed in Cu-doped ZnO nanowires but not in undoped ones, which is probably associated with defects involving both Cu dopants and Zn interstitials.

摘要

采用气相输运法在600摄氏度成功制备了掺铜和未掺铜的氧化锌纳米线。对所制备纳米线的综合结构分析表明，所制备的纳米线为高度结晶的氧化锌纳米线，其中有0.5原子百分比的替代铜掺杂。在掺铜的氧化锌纳米线中观察到了铁磁性，而在未掺铜的纳米线中未观察到，这可能与涉及铜掺杂剂和锌间隙原子的缺陷有关。