• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

一种基于随机扩散忆阻器的新型真随机数发生器。

A novel true random number generator based on a stochastic diffusive memristor.

作者信息

Jiang Hao, Belkin Daniel, Savel'ev Sergey E, Lin Siyan, Wang Zhongrui, Li Yunning, Joshi Saumil, Midya Rivu, Li Can, Rao Mingyi, Barnell Mark, Wu Qing, Yang J Joshua, Xia Qiangfei

机构信息

Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA.

Swarthmore College, Swarthmore, PA, 19081, USA.

出版信息

Nat Commun. 2017 Oct 12;8(1):882. doi: 10.1038/s41467-017-00869-x.

DOI:10.1038/s41467-017-00869-x
PMID:29026110
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5638922/
Abstract

The intrinsic variability of switching behavior in memristors has been a major obstacle to their adoption as the next generation of universal memory. On the other hand, this natural stochasticity can be valuable for hardware security applications. Here we propose and demonstrate a novel true random number generator utilizing the stochastic delay time of threshold switching in a Ag:SiO diffusive memristor, which exhibits evident advantages in scalability, circuit complexity, and power consumption. The random bits generated by the diffusive memristor true random number generator pass all 15 NIST randomness tests without any post-processing, a first for memristive-switching true random number generators. Based on nanoparticle dynamic simulation and analytical estimates, we attribute the stochasticity in delay time to the probabilistic process by which Ag particles detach from a Ag reservoir. This work paves the way for memristors in hardware security applications for the era of the Internet of Things.Memristors can switch between high and low electrical-resistance states, but the switching behaviour can be unpredictable. Here, the authors harness this unpredictability to develop a memristor-based true random number generator that uses the stochastic delay time of threshold switching.

摘要

忆阻器开关行为的内在变异性一直是其作为下一代通用存储器被采用的主要障碍。另一方面,这种自然的随机性对于硬件安全应用可能是有价值的。在此,我们提出并演示了一种利用Ag:SiO扩散忆阻器中阈值开关的随机延迟时间的新型真随机数发生器,它在可扩展性、电路复杂性和功耗方面展现出明显优势。由扩散忆阻器真随机数发生器生成的随机比特无需任何后处理即可通过所有15项美国国家标准与技术研究院(NIST)随机性测试,这对于忆阻开关真随机数发生器来说尚属首次。基于纳米颗粒动态模拟和分析估计,我们将延迟时间的随机性归因于Ag颗粒从Ag储库脱离的概率过程。这项工作为忆阻器在物联网时代的硬件安全应用铺平了道路。忆阻器可以在高电阻状态和低电阻状态之间切换,但其开关行为可能是不可预测的。在此,作者利用这种不可预测性开发了一种基于忆阻器的真随机数发生器,该发生器利用阈值开关的随机延迟时间。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/920a1f1ef6f9/41467_2017_869_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/b39e327b45d4/41467_2017_869_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/9924c0d3a2c5/41467_2017_869_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/0e6b2edc3e67/41467_2017_869_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/920a1f1ef6f9/41467_2017_869_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/b39e327b45d4/41467_2017_869_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/9924c0d3a2c5/41467_2017_869_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/0e6b2edc3e67/41467_2017_869_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ff1/5638922/920a1f1ef6f9/41467_2017_869_Fig4_HTML.jpg

相似文献

1
A novel true random number generator based on a stochastic diffusive memristor.一种基于随机扩散忆阻器的新型真随机数发生器。
Nat Commun. 2017 Oct 12;8(1):882. doi: 10.1038/s41467-017-00869-x.
2
Nanoscale diffusive memristor crossbars as physical unclonable functions.纳米尺度扩散式忆阻器交叉阵列作为物理不可克隆函数。
Nanoscale. 2018 Feb 8;10(6):2721-2726. doi: 10.1039/c7nr06561b.
3
High-speed true random number generation based on paired memristors for security electronics.基于配对忆阻器的高速真随机数生成用于安全电子学。
Nanotechnology. 2017 Nov 10;28(45):455202. doi: 10.1088/1361-6528/aa8b3a.
4
Memristive True Random Number Generator for Security Applications.用于安全应用的忆阻型真随机数发生器。
Sensors (Basel). 2024 Aug 2;24(15):5001. doi: 10.3390/s24155001.
5
BiOSe-Based True Random Number Generator for Security Applications.用于安全应用的基于生物硒的真随机数发生器。
ACS Nano. 2022 Apr 26;16(4):6847-6857. doi: 10.1021/acsnano.2c01784. Epub 2022 Mar 25.
6
Ferroelectric Stochasticity in 2D CuInPS and Its Application for True Random Number Generator.二维CuInPS中的铁电随机性及其在真随机数发生器中的应用
Adv Mater. 2025 Jul;37(26):e2406850. doi: 10.1002/adma.202406850. Epub 2024 Jul 16.
7
Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor.基于随机斑点忆阻器的自计时快速且抗变化的真随机数发生器。
Nat Commun. 2021 May 18;12(1):2906. doi: 10.1038/s41467-021-23184-y.
8
Random-telegraph-noise-enabled true random number generator for hardware security.用于硬件安全的具有随机电报噪声功能的真随机数发生器。
Sci Rep. 2020 Oct 14;10(1):17210. doi: 10.1038/s41598-020-74351-y.
9
Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller.硬件实现了一种真正的随机数生成器,该生成器将六方氮化硼忆阻器与商用微控制器集成在一起。
Nanoscale. 2023 Feb 2;15(5):2171-2180. doi: 10.1039/d2nr06222d.
10
Electric currents in networks of interconnected memristors.相互连接的忆阻器网络中的电流
Phys Rev E Stat Nonlin Soft Matter Phys. 2011 Mar;83(3 Pt 1):031105. doi: 10.1103/PhysRevE.83.031105. Epub 2011 Mar 7.

引用本文的文献

1
Adaptive Feedback Compensation Algorithm for Quantum Random Number Generators.量子随机数发生器的自适应反馈补偿算法
Entropy (Basel). 2025 Aug 14;27(8):860. doi: 10.3390/e27080860.
2
Artificial transneurons emulate neuronal activity in different areas of brain cortex.人工神经元模拟大脑皮层不同区域的神经元活动。
Nat Commun. 2025 Aug 7;16(1):7289. doi: 10.1038/s41467-025-62151-9.
3
Integration of multiple coinflip devices for high-quality random sampling.集成多个抛硬币装置以进行高质量随机抽样。

本文引用的文献

1
Anatomy of Ag/Hafnia-Based Selectors with 10 Nonlinearity.具有 10 次非线性的 Ag/Hafnia 基选择器的解剖
Adv Mater. 2017 Mar;29(12). doi: 10.1002/adma.201604457. Epub 2017 Jan 30.
2
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.具有扩散动力学的忆阻器作为神经形态计算的突触模拟器。
Nat Mater. 2017 Jan;16(1):101-108. doi: 10.1038/nmat4756. Epub 2016 Sep 26.
3
Nanoscale memristive radiofrequency switches.纳米尺度忆阻射频开关。
Sci Rep. 2025 Jul 1;15(1):20479. doi: 10.1038/s41598-025-05171-1.
4
Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications.用于生物神经形态应用的含银纳米颗粒的丝素蛋白基忆阻器中的增强电阻开关和传导机制
Nanomaterials (Basel). 2025 Mar 29;15(7):517. doi: 10.3390/nano15070517.
5
Nonvolatile Memristive Materials and Physical Modeling for In-Memory and In-Sensor Computing.用于内存和传感器内计算的非易失性忆阻材料与物理建模
Small Sci. 2024 Jan 22;4(3):2300139. doi: 10.1002/smsc.202300139. eCollection 2024 Mar.
6
Weighted Echo State Graph Neural Networks Based on Robust and Epitaxial Film Memristors.基于稳健外延薄膜忆阻器的加权回声状态图神经网络
Adv Sci (Weinh). 2025 Feb;12(8):e2411925. doi: 10.1002/advs.202411925. Epub 2025 Jan 4.
7
Memristive Ion Dynamics to Enable Biorealistic Computing.忆阻离子动力学实现生物逼真计算。
Chem Rev. 2025 Jan 22;125(2):745-785. doi: 10.1021/acs.chemrev.4c00587. Epub 2024 Dec 27.
8
Deep Bayesian active learning using in-memory computing hardware.使用内存计算硬件的深度贝叶斯主动学习
Nat Comput Sci. 2025 Jan;5(1):27-36. doi: 10.1038/s43588-024-00744-y. Epub 2024 Dec 23.
9
Stress-induced artificial neuron spiking in diffusive memristors.扩散型忆阻器中应力诱导的人工神经元尖峰信号
Commun Eng. 2024 Nov 9;3(1):163. doi: 10.1038/s44172-024-00315-z.
10
A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications.一种用于神经形态应用的具有挥发性开关特性的柔性激光诱导石墨烯忆阻器。
ACS Appl Mater Interfaces. 2024 Sep 18;16(37):49724-49732. doi: 10.1021/acsami.4c07589. Epub 2024 Sep 6.
Nat Commun. 2015 Jun 25;6:7519. doi: 10.1038/ncomms8519.
4
Layered memristive and memcapacitive switches for printable electronics.分层忆阻和忆容开关用于可打印电子学。
Nat Mater. 2015 Feb;14(2):199-204. doi: 10.1038/nmat4135. Epub 2014 Nov 10.
5
Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices.TiO2 固态器件中的记忆电阻和记忆电容共存。
Nanoscale Res Lett. 2014 Oct 4;9(1):552. doi: 10.1186/1556-276X-9-552. eCollection 2014.
6
Stochastic memristive devices for computing and neuromorphic applications.用于计算和神经形态应用的随机忆阻器件。
Nanoscale. 2013 Jul 7;5(13):5872-8. doi: 10.1039/c3nr01176c. Epub 2013 May 22.
7
Memristive devices for computing.忆阻器计算设备。
Nat Nanotechnol. 2013 Jan;8(1):13-24. doi: 10.1038/nnano.2012.240.
8
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.在铌氧化物交叉点纳米器件中实现了低于 100 飞焦和亚纳秒热驱动的阈值切换。
Nanotechnology. 2012 Jun 1;23(21):215202. doi: 10.1088/0957-4484/23/21/215202.
9
Sub-nanosecond switching of a tantalum oxide memristor.氧化钽忆阻器的亚纳秒级开关。
Nanotechnology. 2011 Dec 2;22(48):485203. doi: 10.1088/0957-4484/22/48/485203. Epub 2011 Nov 9.
10
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.由不对称 Ta2O(5-x)/TaO(2-x) 双层结构制成的快速、高耐久性和可扩展的非易失性存储设备。
Nat Mater. 2011 Jul 10;10(8):625-30. doi: 10.1038/nmat3070.