Gao Zhiyuan, Zhou Jun, Gu Yudong, Fei Peng, Hao Yue, Bao Gang, Wang Zhong Lin
J Appl Phys. 2009 Jun 1;105(11):113707. doi: 10.1063/1.3125449. Epub 2009 Jun 5.
We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.
我们通过数值计算和实验观察，研究了氧化锌纳米线中的压电势对基于纳米线的场效应晶体管传输特性的影响。在包括拉伸、压缩、扭转及其组合的不同应变条件下，整个纳米线中会产生压电势，以调制金属-氧化锌纳米线接触的传输特性，导致两端对称和非对称接触之间的切换，甚至将欧姆接触类型转变为二极管。所制备的氧化锌纳米线通常观察到的自然整流行为可归因于在器件制造和材料处理过程中纳米线中无意产生的应变。这项工作为压电势控制的电子传输和器件（例如压电电子学）提供了进一步的证据。
