Lao Chang Shi, Liu Jin, Gao Puxian, Zhang Liyuan, Davidovic Dragomir, Tummala Rao, Wang Zhong L
School of Materials Science and Engineering, School of Electrical and Computer Engineering, and School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Nano Lett. 2006 Feb;6(2):263-6. doi: 10.1021/nl052239p.
Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as 2,000. The detailed IV characteristics of the Schottky diodes have been investigated at low temperatures. The formation of the Schottky diodes is suggested due to the asymmetric contacts formed in the dielectrophoresis aligning process.
通过介电泳使单个ZnO纳米带/纳米线跨成对的金电极排列，制备了基于单个纳米带/纳米线的整流二极管。在1.5V正向偏压下获得了0.5微安的电流，该二极管可承受高达10V的外加电压。该二极管的理想因子约为3，开/关电流比高达2000。已在低温下研究了肖特基二极管的详细电流-电压特性。由于在介电泳排列过程中形成了不对称接触，因此认为形成了肖特基二极管。
