Leonard F, Tersoff J
IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA.
Phys Rev Lett. 2000 May 15;84(20):4693-6. doi: 10.1103/PhysRevLett.84.4693.
At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning." We find that when a semiconducting carbon nanotube is end contacted to a metal (the optimal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for an unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors.
在半导体 - 金属结处，肖特基势垒高度通常由“费米能级钉扎”确定。我们发现，当半导体碳纳米管与金属进行端接触时（这是纳米器件的最佳几何结构），其行为截然不同。即使费米能级在界面处完全“钉扎”，开启电压仍为未钉扎结所预期的电压。因此，可以调整阈值以实现最佳器件性能，而这在平面接触中是不可能的。预计在纳米管与半导体之间的异质结处也会出现类似行为。
