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通过在变窄的波导上覆盖聚合物包层实现的非热绝缘体上硅环形谐振器。

Athermal Silicon-on-insulator ring resonators by overlaying a polymer cladding on narrowed waveguides.

作者信息

Teng Jie, Dumon Pieter, Bogaerts Wim, Zhang Hongbo, Jian Xigao, Han Xiuyou, Zhao Mingshan, Morthier Geert, Baets Roel

机构信息

Photonics Research Group, INTEC-department, Ghent University-IMEC, Ghent, B-9000, Belgium.

出版信息

Opt Express. 2009 Aug 17;17(17):14627-33. doi: 10.1364/oe.17.014627.

Abstract

Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding.

摘要

通过在变窄的硅线上覆盖聚合物包层,实验证明了无热硅环形谐振器。对于220nm高的SOI波导的TE模式,实现无热条件的理想宽度约为350nm。覆盖聚合物层后,硅环形谐振器的波长温度依赖性降低到小于5pm/℃,几乎比普通硅波导小11倍。从环形传输光谱中提取了350nm弯曲波导(半径为15微米)的光损耗。覆盖聚合物包层后,散射损耗降低到约50dB/cm的可接受水平。

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