Teng Jie, Dumon Pieter, Bogaerts Wim, Zhang Hongbo, Jian Xigao, Han Xiuyou, Zhao Mingshan, Morthier Geert, Baets Roel
Photonics Research Group, INTEC-department, Ghent University-IMEC, Ghent, B-9000, Belgium.
Opt Express. 2009 Aug 17;17(17):14627-33. doi: 10.1364/oe.17.014627.
Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding.
通过在变窄的硅线上覆盖聚合物包层，实验证明了无热硅环形谐振器。对于220nm高的SOI波导的TE模式，实现无热条件的理想宽度约为350nm。覆盖聚合物层后，硅环形谐振器的波长温度依赖性降低到小于5pm/℃，几乎比普通硅波导小11倍。从环形传输光谱中提取了350nm弯曲波导（半径为15微米）的光损耗。覆盖聚合物包层后，散射损耗降低到约50dB/cm的可接受水平。
