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用于广泛可调谐光子集成电路的神奇二氧化硅

Magic Silicon Dioxide for Widely Tunable Photonic Integrated Circuits.

作者信息

Lopez-Rodriguez Bruno, Sharma Naresh, Li Zizheng, van der Kolk Roald, van der Boom Jasper, Scholte Thomas, Chang Jin, Gröblacher Simon, Esmaeil Zadeh Iman

机构信息

Department of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, 2628 CJ Delft, The Netherlands.

Department of Quantum Nanoscience, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ Delft, The Netherlands.

出版信息

ACS Photonics. 2025 Feb 5;12(3):1321-1328. doi: 10.1021/acsphotonics.4c01373. eCollection 2025 Mar 19.

Abstract

Integrated photonic circuits have transformed data communication, biosensing, and light detection and ranging and hold wide-ranging potential for optical computing, optical imaging, and signal processing. These applications often require tunable and reconfigurable photonic components, most commonly accomplished through the thermo-optic effect. However, the resulting tuning window is limited for standard optical materials, such as silicon dioxide and silicon nitride. Most importantly, bidirectional thermal tuning on a single platform has not been realized. For the first time, we show that by tuning and optimizing the deposition conditions in inductively coupled plasma chemical vapor deposition (ICPCVD) of silicon dioxide, this material can be used to deterministically tune the thermo-optic properties of optical devices without introducing significant losses. We demonstrate that we can deterministically integrate positive and negative wavelength shifts on a single chip, validated on amorphous silicon carbide (a-SiC), silicon nitride (SiN), and silicon-on-insulator (SOI) platforms. This enables the fabrication of a novel tunable coupled ring optical waveguide (CROW) requiring only a single heater. In addition, we observe up to a 10-fold improvement of the thermo-optic tunability and demonstrate athermal ring resonators with shifts as low as 1.5 pm/°C. The low-temperature deposition of our silicon dioxide cladding can be combined with lift-off to isolate the optical devices, resulting in a decrease in thermal crosstalk by at least 2 orders of magnitude. Our method paves the way for novel photonic architectures incorporating bidirectional thermo-optic tunability.

摘要

集成光子电路已经改变了数据通信、生物传感以及光探测与测距领域,并在光学计算、光学成像和信号处理方面具有广泛的潜力。这些应用通常需要可调谐和可重构的光子组件,最常见的是通过热光效应来实现。然而,对于诸如二氧化硅和氮化硅等标准光学材料而言,由此产生的调谐窗口是有限的。最重要的是,尚未在单个平台上实现双向热调谐。我们首次表明,通过调整和优化二氧化硅的电感耦合等离子体化学气相沉积(ICPCVD)中的沉积条件,这种材料可用于确定性地调整光学器件的热光特性,而不会引入显著的损耗。我们证明,我们可以在单个芯片上确定性地集成正波长偏移和负波长偏移,并在非晶碳化硅(a-SiC)、氮化硅(SiN)和绝缘体上硅(SOI)平台上得到验证。这使得仅需一个加热器就能制造出一种新型的可调谐耦合环光波导(CROW)。此外,我们观察到热光可调性提高了多达10倍,并展示了热漂移低至1.5 pm/°C的无热环形谐振器。我们的二氧化硅包层的低温沉积可以与剥离工艺相结合,以隔离光学器件,从而使热串扰降低至少2个数量级。我们的方法为包含双向热光可调性的新型光子架构铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c54b/11926958/4dca0b612bed/ph4c01373_0001.jpg

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