双光子吸收的能带隙依赖性

Energy band-gap dependence of two-photon absorption.

作者信息

Van Stryland E W, Woodall M A, Vanherzeele H, Soileau M J

出版信息

Opt Lett. 1985 Oct 1;10(10):490-2. doi: 10.1364/ol.10.000490.

DOI:10.1364/ol.10.000490

PMID:19730461

Abstract

We present measurements of the two-photon absorption coefficients beta(2) of 10 different semiconductors having band-gap energies between 1.4 and 3.7 eV. We find that beta(2) varies as E(g)(-3), as predicted by theory. In addition, the absolute values of beta(2) agree with theory, which includes the effect of nonparabolic bands, the average difference being less than 26%. This agreement permits confident predictions of two-photon absorption coefficients of other materials at other wavelengths.

摘要

我们给出了10种不同半导体的双光子吸收系数β(2)的测量结果，这些半导体的带隙能量在1.4到3.7电子伏特之间。我们发现，正如理论所预测的那样，β(2)随E(g)(-3)变化。此外，β(2)的绝对值与理论相符，该理论包括了非抛物线能带的影响，平均差异小于26%。这种一致性使得我们能够自信地预测其他材料在其他波长下的双光子吸收系数。