Hochbaum Allon I, Gargas Daniel, Hwang Yun Jeong, Yang Peidong
Department of Chemistry, University of California, Berkeley, California 94720, USA.
Nano Lett. 2009 Oct;9(10):3550-4. doi: 10.1021/nl9017594.
Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.
在此，我们展示了一种新颖的无电镀刻合成方法，可制备出具有高表面积且具有与传统多孔硅材料一致发光特性的整体式、单晶、介孔硅纳米线阵列。这些多孔纳米线还保留了其被蚀刻的晶圆的晶体取向。电子显微镜和衍射证实了它们的单晶性，并揭示出围绕孔隙的硅薄至几纳米。共聚焦荧光显微镜显示，这些阵列的光致发光（PL）源自纳米线本身，并且它们的PL光谱表明，这些阵列可用作光催化底物或纳米级光电器件的活性组件。
