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纳米线和纳米触点的筛选:场发射、粘附力和接触电阻。

Screening in nanowires and nanocontacts: field emission, adhesion force, and contact resistance.

机构信息

Computer Science and Mathematics Division, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.

出版信息

Nano Lett. 2009 Dec;9(12):4306-10. doi: 10.1021/nl902533n.

Abstract

The explanations of several nanoscale phenomena such as the field enhancement factor in field emission, the large decay length of the adhesion force between a metallic tip and a surface, and the contact resistance in a nanowire break junction have been elusive. Here we develop an analytical theory of Thomas-Fermi screening in nanoscale structures. We demonstrate that nanoscale dimensions give rise to an effective screening length that depends on the geometry and physical boundary conditions. The above phenomena are shown to be manifestations of the effective screening length.

摘要

几个纳米尺度现象的解释,如场发射中的场增强因子、金属尖端和表面之间的较大粘附力衰减长度以及纳米线断裂结中的接触电阻,一直难以解释。在这里,我们开发了一种纳米尺度结构中托马斯-费米屏蔽的分析理论。我们证明,纳米尺度尺寸导致有效屏蔽长度取决于几何形状和物理边界条件。上述现象被证明是有效屏蔽长度的表现。

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