Kim J H, Lee S K, Kwon O M, Lim D S
Department of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713, Korea.
J Nanosci Nanotechnol. 2009 Jul;9(7):4121-7. doi: 10.1166/jnn.2009.m20.
Ultra thin and smooth nano crystalline diamond films were fabricated with electrostatic self-assembly seeding of explosively synthesized nano-diamond particles. Hard aggregates of nano-diamond particles were crushed by high revolution attrition milling at 1000 RPM to regulate the particle size. Through this process, cationic nano-diamond particles were coated with anionic PSS (poly sodium 4-styrene sulfonate) electrolytes. Anionic Si(100) substrate was coated with cationic PDDA (poly diallyldimethyl ammonium chloride) solution. Si(100)/PDDA/PSS/ND (nano-diamond) layer-by-layer structure was formed as a seeding layer by the simple dipping and rinsing of positively charged substrate into anionic PSS/nano-diamond solution. Throughout the seeding process, neither mechanical damage nor chemical attack was observed on the substrate. Every stage of this preparation was carried out at room temperature and pressure. The effect of attrition milling was determined by changing the milling time from 1 hr to 5 hrs. Through the attritional milling and monolayer formation of the nano-diamond, nucleation density was increased up to 3 x 10(11)/cm2. Typical hot filament chemical vapor deposition system was used to coat the diamond film on the ESA (electrostatic self-assembly) seeded Si(100) substrate. Although typical diamond deposition conditions (90 torr/1% CH4 in H2/800 degrees C) were maintained, ultra thin (< 100 nm) and continuous nano crystalline diamond films were deposited. Regardless of metallic or ceramic substrate, ESND (ESA Seeding of nano-diamond) process is applicable if the substrate has any charge. This simple nano technology based process ensures high thickness uniformity of diamond coating without visible edge effect.
通过对爆炸合成的纳米金刚石颗粒进行静电自组装晶种法,制备了超薄且光滑的纳米晶金刚石薄膜。通过在1000转/分钟的高速研磨下将纳米金刚石颗粒的硬团聚体粉碎来调节粒径。通过该过程,阳离子纳米金刚石颗粒被阴离子PSS(聚4-苯乙烯磺酸钠)电解质包覆。阴离子Si(100)衬底用阳离子PDDA(聚二烯丙基二甲基氯化铵)溶液包覆。通过将带正电的衬底简单浸入阴离子PSS/纳米金刚石溶液中并冲洗,形成Si(100)/PDDA/PSS/ND(纳米金刚石)逐层结构作为晶种层。在整个晶种过程中,未观察到衬底有机械损伤或化学侵蚀。该制备的每个阶段均在室温和常压下进行。通过将研磨时间从1小时改变至5小时来确定研磨的效果。通过纳米金刚石的研磨和单层形成,形核密度提高至3×10(11)/cm2。使用典型的热丝化学气相沉积系统在ESA(静电自组装)晶种的Si(100)衬底上包覆金刚石薄膜。尽管保持典型的金刚石沉积条件(90托/氢气中1%甲烷/800℃),但沉积出了超薄(<100纳米)且连续的纳米晶金刚石薄膜。无论金属或陶瓷衬底如何,如果衬底带有电荷,ESND(纳米金刚石的ESA晶种法)工艺均适用。这种基于简单纳米技术的工艺确保了金刚石涂层具有高厚度均匀性且无可见边缘效应。