Yang Ki-Yeon, Kim Jong-Woo, Byeon Kyeong-Jae, Lee Hee-Chul, Lee Heon
Department of MSE, Korea University, Anam-dong 5-1, Sungbuk-Ku, Seoul 136-701, Korea.
J Nanosci Nanotechnol. 2009 Jul;9(7):4194-6. doi: 10.1166/jnn.2009.m30.
The formation of a residual layer under the imprinted patterns is commonly observed after the imprinting process. In order to utilize the imprinted patterns into the top-down process, the removal process of the residual layer using oxygen plasma is inevitable. However, the critical dimension of the imprinted patterns can be degraded during the residual layer removal process and this degradation becomes severer for smaller sized patterns. Zero residual layer imprinting therefore has advantages in nano-sized patterning. In this study, 70 nm-narrow polymer patterns with a height of 300 nm were successfully fabricated on a Si wafer without any residual layer using a high aspect ratio template and thin polymer resin layer, after which 70 nm-narrow Cr metal nanowires were formed on the Si wafer through the lift-off process.
在压印过程之后，通常会观察到在压印图案下方形成残留层。为了将压印图案应用于自顶向下的工艺中，使用氧等离子体去除残留层的过程是不可避免的。然而，在残留层去除过程中，压印图案的关键尺寸可能会退化，并且对于尺寸较小的图案，这种退化会变得更加严重。因此，零残留层压印在纳米尺寸图案化方面具有优势。在本研究中，使用高深宽比模板和薄聚合物树脂层，在硅晶片上成功制造了高度为300nm的70nm窄聚合物图案，且没有任何残留层，之后通过剥离工艺在硅晶片上形成了70nm窄的Cr金属纳米线。
