Instituto de Ciencia de Materiales de Sevilla, C/ Américo Vespucio 49, 41092 Sevilla, Spain.
Anal Bioanal Chem. 2010 Apr;396(8):2757-68. doi: 10.1007/s00216-009-3312-9. Epub 2009 Dec 2.
The measured peak shape and intensity of the photoemitted signal in X-ray photoelectron spectroscopy (XPS) experiments (elastic and inelastic parts included) are strongly correlated, through electron-transport theory, with the depth distribution of photoelectron emitters within the analyzed surface. This is the basis of so-called XPS peak-shape analysis (also known as the Tougaard method) for non-destructive determination of compositional in-depth (up to 6-8 nm) profiles. This review describes the theoretical basis and reliability of this procedure for quantifying amounts and distributions of material within a surface. The possibilities of this kind of analysis are illustrated with several case examples related to the study of the initial steps of thin-film growth and the modifications induced in polymer surfaces after plasma treatments.
X 射线光电子能谱(XPS)实验中测量的光电子发射信号的峰形和强度(包括弹性和非弹性部分)通过电子输运理论与分析表面内光电子发射体的深度分布强烈相关。这就是所谓的 XPS 峰形分析(也称为 Tougaard 方法)的基础,用于无损确定组成深度(高达 6-8nm)分布。本文综述了该程序用于定量表面内材料数量和分布的理论基础和可靠性。通过与研究薄膜生长初始步骤和等离子体处理后聚合物表面诱导的改性相关的几个实例,说明了这种分析的可能性。