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硅场效应晶体管的局部加热:流体中的器件制造和温度测量。

Localized heating on silicon field effect transistors: device fabrication and temperature measurements in fluid.

机构信息

Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.

出版信息

Lab Chip. 2009 Oct 7;9(19):2789-95. doi: 10.1039/b906048k. Epub 2009 Aug 6.

DOI:10.1039/b906048k
PMID:19967115
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2882169/
Abstract

We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.

摘要

我们通过在绝缘体上硅场效应晶体管的介电表面的德拜层中移动离子的射频焦耳加热,展示了在流体中进行电寻址的局域加热。由于温度分布的局域性,测量靠近表面的流体温度是一个挑战。为了解决这个问题,我们开发了一种基于共价连接荧光团的荧光衰减率的局域测温技术,以提取任何氧化物表面 2nm 内的温度。我们证明了在晶体管表面上对电压相关温度分布的精确空间控制。我们的结果通过使硅晶体管加热器具有双重用途,为现有传感系统引入了一个新的维度,这种加热器不仅可用作场效应传感器,还可用作温度控制器,从而可以在芯片实验室应用中进行局域生化反应。

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本文引用的文献

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