Chang Jee Soo, Kim In Yong, Sung Gun Yong, Shin Jung H
Department of Physics, KAIST, Yuseong-Gu, Daejeon, South Korea.
Opt Express. 2011 Apr 25;19(9):8406-12. doi: 10.1364/OE.19.008406.
Single-mode, strip-loaded silicon-rich silicon nitride (SRSN) waveguide with 11 at.% excess Si and 1.7×10(20) cm(-3) Er was fabricated and characterized. By using a 350 nm thick SRSN:Er core layer and a 850 nm wide SiO2 strip, a high core-mode overlap of 0.85 and low transmission loss of 2.9 dB/cm is achieved. Population inversion of 0.73-0.75, close to the theoretical maximum, is estimated to have been achieved via 1480 nm resonant pumping, indicating that nearly all doped Er in SRSN are optically active. Analysis of the pump power dependence of Er3+ luminescence intensity and lifetime indicate that the Er cooperative upconversion coefficient in SRSN:Er is as low as 2.1×10(-18) cm3/sec.
制备并表征了具有11原子%过量硅和1.7×10²⁰ cm⁻³铒的单模、条形负载富硅氮化硅（SRSN）波导。通过使用350 nm厚的SRSN:Er纤芯层和850 nm宽的SiO₂条形，实现了0.85的高纤芯模重叠和2.9 dB/cm的低传输损耗。据估计，通过1480 nm共振泵浦实现了0.73 - 0.75的粒子数反转，接近理论最大值，这表明SRSN中几乎所有掺杂的铒都是光学活性的。对铒³⁺发光强度和寿命的泵浦功率依赖性分析表明，SRSN:Er中的铒合作上转换系数低至2.1×10⁻¹⁸ cm³/秒。
