Laboratoire de Photophysique Moleculaire, CNRS, Bat. 210, Univ Paris Sud, 91405 Orsay, France.
Nano Lett. 2010 Mar 10;10(3):943-7. doi: 10.1021/nl9038778.
Electron scattering at graphene edges is expected to make a crucial contribution to the electron transport in graphene nanodevices by producing quantum interferences. Atomic-scale scanning tunneling microscopy (STM) topographies of different edge structures of monolayer graphene show that the localization of the electronic density of states along the C-C bonds, a property unique to monolayer graphene, results in quantum interference patterns along the graphene carbon bond network, whose shapes depend only on the edge structure and not on the electron energy.
在石墨烯纳米器件中，电子在石墨烯边缘的散射有望通过产生量子干涉对电子输运产生至关重要的贡献。单层石墨烯不同边缘结构的原子尺度扫描隧道显微镜（STM）形貌表明，沿 C-C 键的电子密度状态的局域化是单层石墨烯所具有的独特性质，这导致了沿石墨烯碳键网络的量子干涉图案，其形状仅取决于边缘结构而与电子能量无关。
