Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, UK.
Nanotechnology. 2010 Mar 12;21(10):105303. doi: 10.1088/0957-4484/21/10/105303. Epub 2010 Feb 16.
This paper describes the formation of mono-domain highly ordered nanoporous alumina on the scale of a 2 inch diameter silicon wafer by anodization of aluminium evaporated on a patterned SiO(2) mask on a silicon substrate. The position of the ordered pores correlates with holes in the SiO(2) mask, which guide the electric field during anodization and initiates pore nucleation. The technique is suitable for the production of ordered nanoporous alumina on a wafer scale and overcomes the time, cost and scale limitations of existing processes.
本文描述了在硅衬底上的图案化 SiO2 掩模上蒸发的铝通过阳极氧化形成单畴高度有序纳米多孔氧化铝的过程，其直径可达 2 英寸。有序孔的位置与 SiO2 掩模中的孔相关联，这些孔在阳极氧化过程中引导电场并引发孔成核。该技术适用于在晶圆规模上生产有序纳米多孔氧化铝，克服了现有工艺的时间、成本和规模限制。
