CNRS/UJF-Grenoble1/CEA LTM, 17 rue des Martyrs, Grenoble 38054, France.
Nanoscale Res Lett. 2013 Jun 17;8(1):287. doi: 10.1186/1556-276X-8-287.
In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>-oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm-2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors.
在这项工作中，纳米压印光刻技术与标准的阳极氧化刻蚀相结合，将垂直圆柱状氧化铝纳米孔的规则三角形阵列完美地制作在标准的<100>取向硅片上。氧化铝多孔阵列的孔径和周期都得到了很好的控制和调整：周期可以从 80nm 变化到 460nm，直径可以从 15nm 变化到任意所需的直径。然后，这些多孔薄膜层被成功地用作在化学气相沉积室中引导单晶硅纳米线阵列的外延生长的模板。我们报道了高达 9×109cm-2密度的硅纳米线，这些纳米线以高度规则的方式排列，并且具有优异的直径分布。所有的工艺步骤都在 2×2cm2 的表面上进行了演示。特别强调选择与微电子制造标准兼容、可适应大表面样品且成本合理的技术。因此，多孔氧化铝阵列的质量，也就是硅纳米线阵列的质量的提高，拓宽了这项技术的潜在应用范围，例如光学探测器或生物传感器。
