Livanos A C, Katzir A, Shellan J B, Yariv A
Appl Opt. 1977 Jun 1;16(6):1633-5. doi: 10.1364/AO.16.001633.
The properties of the Shipley AZ-1350B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 A +/- 5 A/sec. Gratings of high efficiency have been successfully fabricated using the above combination of photoresist and developer.
研究了与Shipley AZ - 303A显影剂一起使用的Shipley AZ - 1350B正性光刻胶的性能。发现使用AZ - 303A显影剂可显著提高光刻胶的灵敏度和线性度。光刻胶的未曝光蚀刻速率为35埃±5埃/秒。使用上述光刻胶和显影剂的组合已成功制造出高效光栅。
