Widmann D W
Appl Opt. 1975 Apr 1;14(4):931-4. doi: 10.1364/AO.14.000931.
During exposure of photoresist layers the light distribution inside the resist is essentially determined by three factors: the incident light pattern generated by the exposure system at the resist surface; the absorption of light by the photoresist; and the reflected waves at the interfaces between layers. Due to standing wave effects, regions of different light intensity are created inside the resist, leading to steplike edge contours of the photoresist after development. The shape of photoresist patterns can be calculated.
在光刻胶层曝光期间，光刻胶内部的光分布主要由三个因素决定：曝光系统在光刻胶表面产生的入射光图案；光刻胶对光的吸收；以及各层之间界面处的反射波。由于驻波效应，光刻胶内部会形成不同光强的区域，显影后导致光刻胶边缘轮廓呈阶梯状。光刻胶图案的形状可以计算出来。
