Department of Materials Science and Engineering, KAIST, Daejeon, Korea.
Nanotechnology. 2010 Mar 19;21(11):115203. doi: 10.1088/0957-4484/21/11/115203. Epub 2010 Feb 22.
Flexible TiO(2) crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO(2)/Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10(4) cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO(2)/Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.
采用低温等离子体增强原子层沉积法在塑料衬底上制备了柔性 TiO2 叉指式存储器件阵列。与在刚性衬底上的单元相比，聚醚砜（PES）上的 Al/TiO2/Al 存储单元具有增强的耐久性（高达 104 次循环）和低开关电压。通过在第一层存储器件上形成额外的 Al/TiO2/Al 层，构建了多层堆叠存储阵列。各层上的存储单元表现出稳定的开关特性和机械鲁棒性，没有层间单元间的干扰。
