Li Wen-Di, Chou Stephen Y
NanoStructures Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
Opt Express. 2010 Jan 18;18(2):931-7. doi: 10.1364/OE.18.000931.
We designed, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance of a 27% transmission peak at 290 nm, a pass-band width of 100 nm (from 250 to 350 nm), and a 20dB rejection ratio between deep-UV wavelength and visible wavelength. The filter consists of an aluminum nano-grid, which was made by coating 20 nm Al on a SiO(2) square grid with 190 nm pitch, 30 nm linewidth and 250 nm depth. The performances agree with a rigorous coupled wave analysis. The wavelength for the peak transmission and the pass-bandwidth can be tuned through adjusting the metal nano-grid dimensions. The filter was fabricated by nanoimprint lithography, hence is large area and low cost. Combining with Si photodetectors, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device or large-area complex integrated imaging array level.
我们设计、制作并展示了一种日盲深紫外通滤光片，其测量的光学性能为：在290纳米处有27%的透射峰值，通带宽度为100纳米（从250至350纳米），且在深紫外波长与可见光波长之间有20分贝的抑制比。该滤光片由铝纳米网格构成，其制作方法是在间距为190纳米、线宽为30纳米、深度为250纳米的SiO(2)方形网格上涂覆20纳米厚的铝。这些性能与严格耦合波分析结果相符。峰值透射波长和通带宽度可通过调整金属纳米网格尺寸来调节。该滤光片采用纳米压印光刻技术制作，因此具有大面积和低成本的特点。与硅光电探测器相结合，该滤光片在单个器件或大面积复杂集成成像阵列层面都能提供简单、有效且低成本的日盲深紫外探测。
