Schroer M D, Xu S Y, Bergman A M, Petta J R
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA.
Rev Sci Instrum. 2010 Feb;81(2):023903. doi: 10.1063/1.3310111.
III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2x10(-9) Torr. A load lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm(2)/(V s).
III-V族纳米线是在纳米尺度上研究材料电子和机械性能的有用平台。然而，与商业纳米线生长反应器相关的成本对于大多数研究小组来说过高。我们开发了用于生长InAs纳米线的热壁和冷壁金属有机气相外延反应器，两者都使用相同的气体处理系统。热壁反应器基于一个廉价的石英管炉，并且在很窄的操作条件范围内就能生长出InAs纳米线。使用一个自制的本底压力为2×10^(-9)托的超高真空冷壁反应器，可以提高晶体质量并提高生长批次间的可重复性。超高真空反应器上的负载锁可防止在样品转移过程中生长室暴露于大气环境。如通过透射电子显微镜所确定的，在冷壁系统中生长的纳米线具有低缺陷密度，并且表现出迁移率接近16000 cm²/(V·s)的场效应门控特性。
