Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7, Canada.
Nanotechnology. 2011 Aug 19;22(33):335602. doi: 10.1088/0957-4484/22/33/335602. Epub 2011 Jul 25.
InAs/InP axial nanowire heterostructures were grown by the Au-assisted vapour-liquid-solid method in a gas source molecular beam epitaxy system. The nanowire crystal structure and morphology were investigated by transmission electron microscopy for various growth conditions (temperature, growth rate, V/III flux ratio). Growth mechanisms were inferred from the InAs and InP segment lengths as a function of the nanowire diameter. Short InAs segment lengths were found to grow by depletion of In from the Au particle as well as by direct impingement, while longer segments of InAs and InP grew by diffusive transport of adatoms from the nanowire sidewalls. The present study offers a way to control the lengths of InAs quantum dots embedded in InP barriers.
砷化铟/磷化铟轴向纳米线异质结构通过 Au 辅助的汽液固法在气源分子束外延系统中生长。通过透射电子显微镜研究了不同生长条件（温度、生长速率、V/III 通量比）下的纳米线晶体结构和形态。从纳米线直径的函数关系推断出生长机制，包括 InAs 和 InP 段的长度。发现较短的 InAs 段通过 Au 颗粒中的 In 耗尽以及直接撞击生长，而较长的 InAs 和 InP 段则通过来自纳米线侧壁的原子的扩散输运生长。本研究为控制嵌入在 InP 势垒中的 InAs 量子点的长度提供了一种方法。
