Johansson Jonas, Svensson C Patrik T, Mårtensson Thomas, Samuelson Lars, Seifert Werner
Solid State Physics and The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden.
J Phys Chem B. 2005 Jul 21;109(28):13567-71. doi: 10.1021/jp051702j.
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
我们提出了一种基于表面扩散的质量输运模型，用于金属颗粒辅助的纳米线生长。该模型解释了一个常见的观察结果，即对于III/V族材料，较细的纳米线比较粗的纳米线更长。我们通过金属有机气相外延生长了GaP纳米线，并将模型计算结果与实验得到的纳米线长度和半径进行了比较。此外，我们证明了在常规温度和压力下生长的III/V族纳米线，吉布斯-汤姆逊效应可以忽略不计。
