Parreira P, Lavareda G, Valente J, Nunes F T, Amaral A, de Carvalho C Nunes
Dept. de Ciência dos Materiais, FCT-UNL, Quinta da Torre, 2829-516 Caparica, Portugal.
J Nanosci Nanotechnol. 2010 Apr;10(4):2701-4. doi: 10.1166/jnn.2010.1431.
Conductive and transparent undoped thin films of indium oxide (InOx ), 120 nm average thick, were deposited by radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium in the presence of oxygen at room temperature. Several substrates were used in order to study their influence on the main properties of these films: alkali free (AF) glass, fused silica, crystalline silicon and polyethylene terephthalate (PET). Surface morphology of the InOx films as a function of the substrates was observed by SEM and showed that the undoped InOx films obtained are nanostructured. For the c-Si substrate, InOx films with increased grain size are obtained, induced by the crystalline substrate. Films deposited on fused silica and AF glass substrates show a nano-grainy surface with similar surface morphologies. The InOx films deposited on AF glass show the highest values of both: electrical conductivity of about 1100 (omega cm)(-1) and visible transmittance of 85%. The substrate has a greater influence on the surface morphology of the films when a polymer (PET) is used. InOx films deposited on PET show a decrease in the electrical conductivity (90 (omega cm)(-1)) and a slight decrease in the average visible transmittance (78%).
通过在室温下于氧气存在的条件下对铟进行射频等离子体增强反应热蒸发（rf-PERTE），沉积了平均厚度为120纳米的氧化铟（InOx）导电透明无掺杂薄膜。使用了几种衬底以研究它们对这些薄膜主要性能的影响：无碱（AF）玻璃、熔融石英、晶体硅和聚对苯二甲酸乙二酯（PET）。通过扫描电子显微镜（SEM）观察了作为衬底函数的InOx薄膜的表面形态，结果表明所获得的无掺杂InOx薄膜是纳米结构的。对于晶体硅（c-Si）衬底，由于晶体衬底的作用，获得了晶粒尺寸增大的InOx薄膜。沉积在熔融石英和AF玻璃衬底上的薄膜呈现出具有相似表面形态的纳米颗粒表面。沉积在AF玻璃上的InOx薄膜在以下两方面均表现出最高值：电导率约为1100（Ω·cm）⁻¹，可见光透射率为85%。当使用聚合物（PET）作为衬底时，衬底对薄膜的表面形态有更大的影响。沉积在PET上的InOx薄膜的电导率降低（90（Ω·cm）⁻¹），平均可见光透射率略有降低（78%）。
