Woo Jong-Kwan, Cho Shinho
J Nanosci Nanotechnol. 2014 Dec;14(12):8982-6. doi: 10.1166/jnn.2014.10081.
Eu-doped In2O3 (EIO) thin films were deposited by radio-frequency magnetron sputtering on glass substrates with varying growth temperatures. All the EIO thin films showed a significant dependence on the growth temperature. From the figure of merit index data, the optimum growth temperature for depositing high-quality EIO thin films was found to be 300 degrees C. The ELO thin film deposited at 300 degrees C showed a highly preferential growth orientation along the (222) plane with an average particle size of 160 nm, bandgap energy of 3.94 eV, average optical transmittance of 65.2% in the wavelength range 450-1100 nm, and electrical resistivity of 2.5 x 10(-3) Ω cm. These results indicate that the electrical and optical properties of EIO thin films can be modulated by controlling growth temperature.
通过射频磁控溅射在不同生长温度的玻璃基板上沉积了掺铕氧化铟（EIO）薄膜。所有的EIO薄膜都表现出对生长温度的显著依赖性。从品质因数指数数据来看，发现沉积高质量EIO薄膜的最佳生长温度为300摄氏度。在300摄氏度下沉积的EIO薄膜沿（222）平面呈现出高度择优生长取向，平均粒径为160纳米，带隙能量为3.94电子伏特，在450 - 1100纳米波长范围内的平均光学透过率为65.2%，电阻率为2.5×10⁻³Ω·cm。这些结果表明，通过控制生长温度可以调节EIO薄膜的电学和光学性能。
