Nanophotonics Technology Center (NTC), Universidad Politécnica de Valencia, Valencia, Spain.
Nano Lett. 2010 Apr 14;10(4):1506-11. doi: 10.1021/nl9041017.
We demonstrate experimentally all-optical switching on a silicon chip at telecom wavelengths. The switching device comprises a compact ring resonator formed by horizontal silicon slot waveguides filled with highly nonlinear silicon nanocrystals in silica. When pumping at power levels about 100 mW using 10 ps pulses, more than 50% modulation depth is observed at the switch output. The switch performs about 1 order of magnitude faster than previous approaches on silicon and is fully fabricated using complementary metal oxide semiconductor technologies.
我们在硅片上演示了在电信波长下的全光开关。该开关器件由一个紧凑的环形谐振器组成,由填充在二氧化硅中的水平硅槽波导形成。当使用 10ps 脉冲在约 100mW 的功率水平下泵浦时,在开关输出端观察到超过 50%的调制深度。与以前的硅基方法相比,该开关的速度快了约 1 个数量级,并且完全采用互补金属氧化物半导体技术制造。