Institut P', CNRS-Université de Poitiers-ENSMA, Département Physique et Mécanique des Matériaux, SP2MI-Téléport 2, F86962 Futuroscope-Chasseneuil cedex, France.
Phys Rev Lett. 2010 Mar 5;104(9):096101. doi: 10.1103/PhysRevLett.104.096101. Epub 2010 Mar 2.
In situ stress measurements during two-dimensional growth of low mobility metal films on amorphous Si were used to demonstrate the impact of interface reactivity and phase transformation on stress evolution. Using Mo1-xSix films as examples, the results show that the tensile stress rise, which develops after the film has become crystalline, is correlated with an increase in lateral grain size. The origin of the tensile stress is attributed to the volume change resulting from the alloy crystallization, which occurs at a concentration-dependent critical thickness.
在非晶硅上二维生长低迁移率金属膜的原位应力测量用于证明界面反应性和相变对应力演化的影响。以 Mo1-xSix 薄膜为例，结果表明，在薄膜结晶后出现的拉伸应力上升与横向晶粒尺寸的增加有关。拉伸应力的起源归因于合金结晶导致的体积变化，该变化发生在浓度相关的临界厚度处。
