基于体硅的氧化绝缘体上硅（OxSOI）：一种新型光子平台。

Oxidized silicon-on-insulator (OxSOI) from bulk silicon: a new photonic platform.

作者信息

Sherwood-Droz Nicolás, Gondarenko Alexander, Lipson Michal

机构信息

School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.

出版信息

Opt Express. 2010 Mar 15;18(6):5785-90. doi: 10.1364/OE.18.005785.

DOI:10.1364/OE.18.005785

PMID:20389595

Abstract

We demonstrate a bulk silicon alternative to the conventional silicon-on-insulator photonics platform, using common CMOS process-based Si(3)N(4) masking and oxidation techniques. We show waveguide losses as low as 2.92 dB/cm with a technique that can be implemented on the front-end of a typical CMOS fabrication line.

摘要

我们展示了一种传统绝缘体上硅光子学平台的体硅替代方案，采用基于常见互补金属氧化物半导体（CMOS）工艺的Si(3)N(4)掩膜和氧化技术。我们展示了一种可在典型CMOS制造生产线前端实施的技术，其波导损耗低至2.92 dB/cm。