School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, USA.
Nanotechnology. 2010 May 14;21(19):195307. doi: 10.1088/0957-4484/21/19/195307. Epub 2010 Apr 21.
A method for achieving large area integration of nanowires into electrically accessible device structures remains a major challenge. We have achieved directed growth and integration of ZnO nanobridge devices using photolithographically patterned carbonized photoresist and vapor transport. This carbonized photoresist method avoids the use of metal catalysts, seed layers, and pick and place processes. Growth and electrical connection take place simultaneously for many devices. Electrical measurements on carbonized photoresist/ZnO nanobridge/carbonized photoresist structures configured as three-terminal field effect devices indicate bottom gate modulation of the conductivity of the n-type ZnO channel. Nanobridge devices were found to perform well as ultraviolet and gas sensors, and were characterized as regards ultraviolet light pulsing, oxygen concentration, and humidity. The sensitivity of the three-terminal nanobridge sensors to UV light and oxygen was enhanced by application of a negative bottom gate voltage.
将纳米线集成到可电访问的器件结构中的大面积集成方法仍然是一个主要挑战。我们已经使用光刻图案化的碳化光刻胶和气相传输实现了 ZnO 纳米桥器件的定向生长和集成。这种碳化光刻胶方法避免了使用金属催化剂、种子层和挑取和放置工艺。对于许多器件，生长和电连接同时进行。配置为三端场效应器件的碳化光刻胶/ZnO 纳米桥/碳化光刻胶结构的电测量表明，n 型 ZnO 沟道的电导率可以通过底栅调制。纳米桥器件作为紫外光和气体传感器表现良好，并对紫外光脉冲、氧浓度和湿度进行了表征。通过施加负的底栅电压，三端纳米桥传感器对紫外光和氧的灵敏度得到了增强。
