Department of Materials Science and Engineering, The Pennsylvania State University, The Electro-Optics Center, University Park, Pennsylvania 16802, USA.
ACS Nano. 2010 May 25;4(5):2667-72. doi: 10.1021/nn1003138.
We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al(2)O(3), HfO(2), TiO(2), and Ta(2)O(5) varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta(2)O(5), while the deposition if TiO(2) appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.
我们展示了外延石墨烯与薄膜介电材料的集成，以用于石墨烯晶体管的开发。在沉积 Al(2)O(3)、HfO(2)、TiO(2)和 Ta(2)O(5)之后，介电材料的选择和沉积参数对外延石墨烯结构和电子性质的影响也各不相同。每种介电薄膜都需要使用成核层来确保在石墨烯表面形成均匀、连续的覆盖。在外延 Ta(2)O(5)之后，石墨烯的质量会严重恶化，而 TiO(2)的沉积则似乎会提高石墨烯的载流子迁移率。最后，我们讨论了通过介电堆叠工程来提高晶体管性能的潜力。
