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化学衍生氧化石墨烯:迈向大面积薄膜电子学和光电子学。

Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

机构信息

Department of Materials, Imperial College London, UK.

出版信息

Adv Mater. 2010 Jun 11;22(22):2392-415. doi: 10.1002/adma.200903689.

Abstract

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

摘要

化学衍生的氧化石墨烯(GO)具有一系列独特的性质,这些性质源于在石墨的化学剥离过程中引入的含氧官能团。GO 在各种溶剂中的可溶性使其能够进行大面积的薄膜沉积,从而为基于 GO 的薄膜电子学和光电学提供了一种途径。GO 的电学和光学性质强烈依赖于其化学和原子结构,并且可以通过化学工程在很宽的范围内进行调节。在这篇综述中,讨论了基于 GO 的薄膜的基本结构和性质与其在电子学和光电学中的潜在应用之间的关系。

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