Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.
作者信息
Jeong Sunho, Ha Young-Geun, Moon Jooho, Facchetti Antonio, Marks Tobin J
机构信息
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA.
出版信息
Adv Mater. 2010 Mar 26;22(12):1346-50. doi: 10.1002/adma.200902450.
PMID:20437479
Abstract
摘要
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