立方碳化硅（111）硅（111）衬底上的外延石墨烯。
Epitaxial graphene on cubic SiC(111)Si(111) substrate.
作者信息
Ouerghi A, Kahouli A, Lucot D, Portail M, Travers L, Gierak J, Penuelas J, Jegou P, Shukla A, Chassagne T, Zielinski M
出版信息
Appl Phys Lett. 2010 May 10;96(19):191910. doi: 10.1063/1.3427406. Epub 2010 May 14.
Abstract
Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.
摘要
通过固态石墨化在碳化硅（SiC）衬底上生长的外延石墨烯薄膜在电子和光电子应用方面具有极大的吸引力。在本文中，我们探索了在3C-SiC(111)Si(111)衬底上的外延石墨烯薄膜的性质。广泛使用X射线光电子能谱和扫描隧道显微镜来表征少层石墨烯（FLG）表面的质量。拉曼光谱研究有助于确认石墨成分并测量FLG样品的厚度。
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