Eda Goki, Fanchini Giovanni, Chhowalla Manish
Nat Nanotechnol. 2008 May;3(5):270-4. doi: 10.1038/nnano.2008.83. Epub 2008 Apr 6.
The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.
将单壁碳纳米管和纳米线等新型材料集成到器件中一直具有挑战性，但转移印刷和基于溶液的方法的发展现在使这些材料能够被整合到大面积电子器件中。目前，人们正在做出类似的努力，以使石墨烯集成到器件在技术上可行。在此，我们报告一种基于溶液的方法，该方法能够在大面积上均匀且可控地沉积厚度从单层到几层不等的还原氧化石墨烯薄膜。由此，其光电特性可以在几个数量级上进行调节，使其有可能用于柔性和透明半导体或半金属。最薄的薄膜表现出类似石墨烯的双极性晶体管特性，而较厚的薄膜则表现为类似石墨的半金属。总体而言，我们的沉积方法可能代表了一条将石墨烯有趣的基本特性转化为技术上可行的器件的途径。
