Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nanotechnology. 2010 Jul 2;21(26):265201. doi: 10.1088/0957-4484/21/26/265201. Epub 2010 Jun 10.
We introduce a new device architecture for the independent mechanical and electrostatic tuning of nanoscale charge transport. In contrast to previous gated mechanical break junctions with suspended source-drain electrodes, the devices presented here prevent an electromechanical tuning of the electrode gap by the gate. This significant improvement originates from a direct deposition of the source and the drain electrodes on the gate dielectric. The plasma-enhanced native oxide on the aluminum gate electrode enables measurements at gate voltages up to 1.8 V at cryogenic temperatures. Throughout the bending-controlled tuning of the source-drain distance, the electrical continuity of the gate electrode is maintained. A nanoscale island in the Coulomb blockade regime serves as a first experimental test system for the devices, in which the mechanical and electrical control of charge transport is demonstrated.
我们介绍了一种新的器件架构，用于纳米尺度电荷输运的独立机械和静电调谐。与之前带有悬浮源漏电极的栅控机械断开结不同，这里展示的器件通过栅极防止电极间隙的机电调谐。这一显著改进源于源极和漏极直接沉积在栅介质上。在铝栅电极上的等离子体增强本征氧化物使得在低温下可以在高达 1.8 V 的栅极电压下进行测量。在源漏距离的弯曲控制调谐过程中，栅极电极的电连续性得以保持。库仑阻塞态下的纳米尺度岛作为器件的第一个实验测试系统，其中展示了电荷输运的机械和电气控制。
