Martin Christian A, Smit Roel H M, van der Zant Herre S J, van Ruitenbeek Jan M
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nano Lett. 2009 Aug;9(8):2940-5. doi: 10.1021/nl901355y.
We have exploited the electromechanical properties of gated mechanical break junctions to form single-atom relays. The gate voltage can be used to reversibly switch between a monatomic contact with a conductance around 2e(2)/h and the tunneling regime. In tunneling, the source-drain conductance varies smoothly with gate voltage. The characteristics of the devices can be understood within a simple continuum model. It indicates that the elastic properties of the substrate facilitate the electromechanical tuning and that the details of the switching depend sensitively on the nanoscale geometry of the electrode tips.
我们利用门控机械断裂结的机电特性来形成单原子继电器。栅极电压可用于在电导约为2e(2)/h的单原子接触与隧穿状态之间进行可逆切换。在隧穿过程中，源漏电导随栅极电压平滑变化。这些器件的特性可以在一个简单的连续介质模型中得到理解。这表明衬底的弹性特性有助于机电调谐，并且开关的细节敏感地取决于电极尖端的纳米尺度几何形状。
