Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Gyungbuk, 37673, Republic of Korea.
Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro Gwanak-gu, Seoul, 08826, Republic of Korea.
Nat Commun. 2018 May 23;9(1):2037. doi: 10.1038/s41467-018-04385-4.
Although conventional p-type doping using small molecules on graphene decreases its sheet resistance (R), it increases after exposure to ambient conditions, and this problem has been considered as the biggest impediment to practical application of graphene electrodes. Here, we report an extremely stable graphene electrode doped with macromolecular acid (perfluorinated polymeric sulfonic acid (PFSA)) as a p-type dopant. The PFSA doping on graphene provides not only ultra-high ambient stability for a very long time (> 64 days) but also high chemical/thermal stability, which have been unattainable by doping with conventional small-molecules. PFSA doping also greatly increases the surface potential (0.8 eV) of graphene, and reduces its R by ~56%, which is very important for practical applications. High-efficiency phosphorescent organic light-emitting diodes are fabricated with the PFSA-doped graphene anode (98.5 cd A without out-coupling structures). This work lays a solid platform for practical application of thermally-/chemically-/air-stable graphene electrodes in various optoelectronic devices.
虽然在石墨烯上使用小分子进行传统的 p 型掺杂可以降低其片电阻(R),但在暴露于环境条件后,其电阻会增加,这一问题被认为是石墨烯电极实际应用的最大障碍。在这里,我们报告了一种用高分子酸(全氟聚合物磺酸(PFSA))掺杂的极其稳定的 p 型掺杂石墨烯电极。PFSA 对石墨烯的掺杂不仅提供了超高的环境稳定性(超过 64 天),而且具有很高的化学/热稳定性,这是传统小分子掺杂所无法达到的。PFSA 掺杂还极大地增加了石墨烯的表面电势(0.8eV),并将其 R 降低了约 56%,这对于实际应用非常重要。用 PFSA 掺杂的石墨烯阳极制备了高效的磷光有机发光二极管(在没有外耦合结构的情况下为98.5cdA)。这项工作为在各种光电设备中应用热稳定/化学稳定/空气稳定的石墨烯电极奠定了坚实的基础。