Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Nano Lett. 2010 Jul 14;10(7):2454-60. doi: 10.1021/nl100750v.
We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current-gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.
我们制备了具有亚 10nm 条带宽度的六方石墨烯纳米网（GNMs）。该制备方法结合了纳米压印光刻、用于高分辨率纳米压印模板图案化的嵌段共聚物自组装，以及石墨烯的静电印刷。与未图案化的 GFET 相比，即使在室温下，由 GNMs 制成的石墨烯场效应晶体管（GFET）也表现出非常不同的电子特性。我们观察到在漏极电流-栅极电压关系中存在多平台，以及随着 GNMs 的平均条带宽度的减小，ON/OFF 电流比增强。这些效应归因于 GNMs 中电子子带和能隙的形成。这种介观石墨烯结构和纳米制造方法可用于构建基于石墨烯超晶格的未来电子设备。
