CEA-Grenoble, LITEN/DTNM/LCRE, 17, rue des Martyrs, 38054, Grenoble Cedex 9, France.
Nanoscale. 2010 May;2(5):677-80. doi: 10.1039/b9nr00314b. Epub 2010 Jan 27.
We report on the VLS (vapour-liquid-solid) fabrication and characterization of in situ axially doped silicon nanowires (SiNWs) at both ends, and on their integration into a bottom gate-top contact geometry on both rigid and flexible substrates to realize field-effect transistors (FETs). To improve contact resistance between SiNWs and source/drain electrodes, we axially tuned the level of doping at both ends of the SiNWs by sequential in situ addition of PH(3). Characterisation of SiNWs by scanning spreading resistance microscopy in the device configuration allowed us to determine precisely the different sections of the SiNWs. The transfer to flexible substrates still allowed for workable FET structures. Transistors with electron mobilities exceeding 120 cm(2) V(-1) s(-1), I(on)/I(off) ratios greater than 10(7) and ambipolar behaviour were achieved.
我们报告了在 VLS（汽-液-固）法制备和原位轴向掺杂硅纳米线（SiNWs）的特性，以及它们在刚性和柔性衬底上集成到底栅顶接触几何结构中，以实现场效应晶体管（FETs）。为了降低 SiNWs 与源/漏电极之间的接触电阻，我们通过顺序原位添加 PH(3)，在 SiNWs 的两端轴向调节掺杂水平。在器件结构中通过扫描扩展电阻显微镜对 SiNWs 的特性进行表征，使我们能够精确地确定 SiNWs 的不同部分。转移到柔性衬底仍然允许制造可工作的 FET 结构。实现了电子迁移率超过 120 cm(2) V(-1) s(-1)、I(on)/I(off) 比值大于 10(7)和双极性行为的晶体管。
