Empa, Swiss Federal Laboratories for Materials Science and Technology, Thun and 8600 Dübendorf, Switzerland.
Nature. 2010 Jul 22;466(7305):470-3. doi: 10.1038/nature09211.
Graphene nanoribbons-narrow and straight-edged stripes of graphene, or single-layer graphite-are predicted to exhibit electronic properties that make them attractive for the fabrication of nanoscale electronic devices. In particular, although the two-dimensional parent material graphene exhibits semimetallic behaviour, quantum confinement and edge effects should render all graphene nanoribbons with widths smaller than 10 nm semiconducting. But exploring the potential of graphene nanoribbons is hampered by their limited availability: although they have been made using chemical, sonochemical and lithographic methods as well as through the unzipping of carbon nanotubes, the reliable production of graphene nanoribbons smaller than 10 nm with chemical precision remains a significant challenge. Here we report a simple method for the production of atomically precise graphene nanoribbons of different topologies and widths, which uses surface-assisted coupling of molecular precursors into linear polyphenylenes and their subsequent cyclodehydrogenation. The topology, width and edge periphery of the graphene nanoribbon products are defined by the structure of the precursor monomers, which can be designed to give access to a wide range of different graphene nanoribbons. We expect that our bottom-up approach to the atomically precise fabrication of graphene nanoribbons will finally enable detailed experimental investigations of the properties of this exciting class of materials. It should even provide a route to graphene nanoribbon structures with engineered chemical and electronic properties, including the theoretically predicted intraribbon quantum dots, superlattice structures and magnetic devices based on specific graphene nanoribbon edge states.
石墨烯纳米带-石墨烯的窄而直的边缘条带,或单层石墨-预计将表现出电子特性,使其成为制造纳米尺度电子器件的理想选择。特别是,尽管二维母体材料石墨烯表现出半金属行为,但量子限制和边缘效应应该使所有宽度小于 10nm 的石墨烯纳米带都具有半导体特性。但是,由于石墨烯纳米带的可用性有限,它们的潜在应用受到了阻碍:尽管已经使用化学、声化学和光刻方法以及通过碳纳米管的解卷来制造它们,但是以化学精度可靠地生产宽度小于 10nm 的石墨烯纳米带仍然是一个重大挑战。在这里,我们报告了一种生产具有不同拓扑结构和宽度的原子精度石墨烯纳米带的简单方法,该方法使用分子前体在表面辅助下耦合成线性聚苯,并随后进行环脱氢反应。石墨烯纳米带产物的拓扑结构、宽度和边缘外围由前体单体的结构定义,这些单体可以设计成获得广泛的不同石墨烯纳米带。我们期望我们的自下而上的原子精确制造石墨烯纳米带的方法最终将能够对这种令人兴奋的材料类别的性质进行详细的实验研究。它甚至可能为具有工程化学和电子性质的石墨烯纳米带结构提供一条途径,包括理论上预测的带内量子点、超晶格结构以及基于特定石墨烯纳米带边缘状态的磁性器件。